The MOSFET device performance can be increased by reducing the channel length. But, the traditional planar design introduces performance limitations when device dimensions shrink. As transistor sizes continue to shrink, 3-D MOSFET architectures present available path forward, enabling continued performance improvements while addressing the limitations of traditional planar designs. This faculty development programme (FDP) is intended to discuss recent advancements in the field of 3D MOSFETs. It will cover different device structures of 3D MOSFETs, Materials for3D MOSFETs, and Fabrication Technologies for3D MOSFETs. It will also highlight the challenges in 3D MOSFET scaling, device performance and reliability. Besides, Device Modelling and TCADS emulation for 3D MOSFETs will be highlighted. The Impact of 3D MOSFETs on circuit design and integration will be discussed